The application of floating dies for high speed growth of CsI single crystals by edge-defined film-fed growth (EFG)

Publication date: 15 October 2014
Source:Journal of Crystal Growth, Volume 404
Author(s): Christo Guguschev , George Calvert , Stephen Podowitz , Arturas Vailionis , Andrew Yeckel , Robert S. Feigelson
Floating graphite and fused silica dies were used to grow both undoped and Na doped CsI crystals by the edge-defined film-fed growth (EFG) method. Both die materials yielded high quality CsI crystals at high growth rates. Under the conditions employed in these growth experiments, a pull rate of up to 45mm/h was possible using a 15mm diameter graphite die. Growth procedures were developed to enhance crystal quality through iterative die design in combination with numerical modeling. The formation of cylindrical voids (bubble tracks) was investigated and methods were developed for their suppression.