Publication date: 1 November 2014
Source:Journal of Crystal Growth, Volume 405
Author(s): T.W. Kim , T.F. Kuech , L.J. Mawst
Nitrogen incorporation in bulk films of GaAsN, InGaAsN, and GaAsSbN films grown by metalorganic vapor phase epitaxy (MOVPE) on (100) and (311)B GaAs substrates was investigated. These films, nominally lattice-matched to a GaAs substrate, were deposited at relatively higher growth temperature (600E g ~1
Source:Journal of Crystal Growth, Volume 405
Author(s): T.W. Kim , T.F. Kuech , L.J. Mawst