15 January 2013
Publication year: 2013
Source:Journal of Crystal Growth, Volume 363
Lanthanum aluminate (LAO) films were grown epitaxially on Si (001) by atomic layer deposition (ALD) using a buffer layer of strontium titanate (STO) grown by molecular beam epitaxy. The ALD growth of LAO was done at 250In-situ X-ray photoelectron spectroscopy (XPS) was used to characterize the LAO/STO/Si interfaces at various stages throughout the growth and annealing process. XPS analysis showed minimal SiO bonding at the STO/Si interface after the ALD process and after post-deposition annealing at 600
► Lanthanum aluminate (LAO) grown by atomic layer deposition at 250c -axis oriented LAO forms upon annealing at 600
Publication year: 2013
Source:Journal of Crystal Growth, Volume 363