Publication date: 15 March 2015
Source:Journal of Crystal Growth, Volume 414
Author(s): Robert Czernecki , Ewa Grzanka , Julita Smalc-Koziorowska , Szymon Grzanka , Dario Schiavon , Grzegorz Targowski , Jerzy Plesiewicz , Pawel Prystawko , Tadeusz Suski , Piotr Perlin , Mike Leszczynski
InGaN/GaN multiple quantum well structures were grown on bulk GaN and on sapphire substrates using the metalorganic vapor-phase epitaxy in order to study the influence of hydrogen during the growth of the GaN barriers. This hydrogen flow had the following effects on the structures: (i) the thickness of the QWs was reduced, (ii) the indium concentration in the QWs was decreased and (iii) the growth rate of the quantum barriers was increased.
Source:Journal of Crystal Growth, Volume 414
Author(s): Robert Czernecki , Ewa Grzanka , Julita Smalc-Koziorowska , Szymon Grzanka , Dario Schiavon , Grzegorz Targowski , Jerzy Plesiewicz , Pawel Prystawko , Tadeusz Suski , Piotr Perlin , Mike Leszczynski