Optical and structural studies of highly uniform Ge quantum dots on Si (001) substrate grown by solid-source molecular beam epitaxy

Available online 17 January 2013
Publication year: 2013
Source:Journal of Crystal Growth

We have studied Ge self-assembled quantum dots (QDs) grown by molecular beam epitaxy on Si (001) substrates. We investigated the effect of a pulse growth technique, which involves the combination of a high deposition rate of 2.8Å/s and a 5-s growth interruption (GI) time, on the properties of 20-layer stacked Ge QDs. We found that both the size and size dispersion of the QDs grown using the pulse growth technique were successfully maintained without generating any dislocations even after 20 layers of stacking. Further, a high sheet density of 6.9×10¹⁰ cm⁻² and better size dispersion of 12.4% can be achieved. In photoluminescence (PL) measurements, PL emission at 0.833eV with line width of 71.2meV was clearly observed at 12K for 20-layer stacked Ge QDs grown using the pulse growth technique.

Highlights

► Highly-uniform self-assembled Ge QDs were grown by SS-MBE. ► High-quality 20-layer stacked Ge QDs can be obtained by means of the pulse growth technique. ► PL emission at 1492.1nm with a better FWHM of 70.9 meV was observed for 20-layer stacked Ge QDs.

Optical and structural studies of highly uniform Ge quantum dots on Si (001) substrate grown by solid-source molecular beam epitaxy

Highlights

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