MOVPE growth of GaP on Si with As initial coverage

Publication date: Available online 19 November 2016
Source:Journal of Crystal Growth
Author(s): A. Navarro, E. García-Tabarés, B. Galiana, P. Caño, I. Rey-Stolle, C. Ballesteros
The growth of a GaP 50nm layer on Si by metalorganic vapor phase epitaxy is studied using AsH3 and PH3 pre-exposure at low (550°C) and high (800°C) growth temperatures. The samples are characterized by transmission electron microscopy. The results obtained reveal that the use of As as a first coverage layer on top of misorientated Si-substrates favors the formation of a defect-free GaP epitaxial layer, for a wide range of AsH3 pre-exposure times using high growth temperature (800°C), even though relatively low Si substrate annealing temperatures are used (850°C) and no homoepitaxial Si layer was first grown. The procedure presented in this work reduces the thermal budget and complexity compared to most previous GaP/Si routines.