Publication date: Available online 21 November 2016
Source:Journal of Crystal Growth
Author(s): Naoki Nishimoto, Junko Fujihara, Katsumi Yoshino
GaSb thin films were grown on quartz substrate and Ge(100) 1°-off-axis substrate by RF magnetron sputtering at growth temperatures of 400, 500, and 600p -type conductivity, irrespective of the growth method and growth conditions. However, we prepared an undoped GaSb thin film with n -type conductivity by using a Ge(100) 1°-off-axis substrate. This finding led to the conclusion that the use of an off-axis substrate affects the defect formation mechanism and enables the control of the conduction mechanism in undoped GaSb thin films.
Source:Journal of Crystal Growth
Author(s): Naoki Nishimoto, Junko Fujihara, Katsumi Yoshino