N–H related defect playing the role of acceptor in GaAsN grown by chemical beam epitaxy

Publication date: Available online 6 December 2016
Source:Journal of Crystal Growth
Author(s): Omar Elleuch, Li Wang, Kan-Hua Lee, Kazuma Ikeda, Nobuaki Kojima, Yoshio Ohshita, Masafumi Yamaguchi
The N–H related defects at 3124cm^-1 are found to be acceptors in GaAsN grown by chemical beam epitaxy, by comparing the concentrations of N–H defects with those of acceptors as a function of annealing condition. The vibrations of N–H defects appear as local vibration modes at 2952, 3011, 3098, and 3124cm^-1 using Fourier transform infrared (FTIR) spectroscopy. The integrated absorptions of the 2952, 3011 and 3098cm^-1 peaks decrease and that of the 3124cm^-1 peak increases due to the annealing. On the other hand, the acceptor concentration increases with the annealing time, based on capacitance‒temperature (C‒T) measurement. The densities of N–H defects at 3124cm^-1 and those of acceptors are almost equal independent of the annealing condition. This result suggests that the N–H defects at 3124cm^-1 play the role of acceptors.