Publication date: 15 February 2017
Source:Journal of Crystal Growth, Volume 460
Author(s): M. Porrini, R. Scala, V.V. Voronkov
The evaporation from the silicon melt, during Czochralski process, is an important effect for Phosphorus and Antimony dopants. The evaporation rate γ was deduced from the measured axial profile of the resistivity converted into the concentration. For the heavily doped crystals, the value of γ is very similar for both P and Sb: in the order of 5.5×10−5 2 to P1 – and becomes a limiting step. The evaporation rate is decreased and, in fact, becomes negligible.
Source:Journal of Crystal Growth, Volume 460
Author(s): M. Porrini, R. Scala, V.V. Voronkov