Cu-Si nanoobjects prepared by CVD on Cu/Cu5Si-substrates using various precursors (SiH4, EtSiH3, BuSiH3) with added H2 or air

Publication date: Available online 16 February 2017
Source:Journal of Crystal Growth
Author(s): Mariana Klementová, Lubomír Krabáč, Petr Brázda, Lukáš Palatinus, Vladislav Dřínek
The CVD method was employed to synthesize nanoobjects of Cu-Si phases at temperature of about 500 °C. Cu/Cu5Si-substrates and various Si-containing precursors (SiH4, EtSiH3, BuSiH3) with/without added H2 or air were used. Nanoobjects of various morphologies (nanoplatelets of η '- Cu3Si, nanoribbons and nanorods of η ''- Cu3Si, and nanowires of γ-Cu83Si17) were obtained depending on the experimental conditions, mainly type and pressure of precursor. A mixture of Si-containing precursor and H2/air promotes the growth of nanoobjects compared to using the pure Si-containing precursor. With increasing pressure of precursors the morphology changes from 1D (nanowires) to 2D (nanoribbons, nanoplatelets). Nanoobjects grow via the non-catalytic VS mechanism.

Graphical abstract