Growth and characterization of Arsenic doped CdTe single crystals grown by Cd-solvent traveling-heater method

Publication date: Available online 2 March 2017
Source:Journal of Crystal Growth
Author(s): Akira Nagaoka, Kyu-Bun Han, Sudhajit Misra, Thomas Wilenski, Taylor D. Sparks, Michael A. Scarpulla
We report the growth of p-type As-doped, Cd-rich CdTe single crystals using metallic Cd as the solvent in the traveling-heater method. We investigate the growth process from Cd solution in terms of the solid-liquid interface shape and the effects of As incorporation on p-type doping. The resulting CdTe crystals have Cd-rich composition which enhances p-type doping. The As doping efficacy was measured for As concentrations by the combination of inductively coupled plasma mass spectrometry, capacitance-voltage measurements. The p-type doping concentration varied from 6x10¹⁵ to 8x10¹⁶ cm^-3 with increasing As concentration, with an apparent doping limit just below 10¹⁷ cm^-3.