Publication date: 15 April 2017
Source:Journal of Crystal Growth, Volume 464
Author(s): Bei Shi, Qiang Li, Kei May Lau
We report the effects of multi-layer InAs/InAlGaAs quantum dots (QDs) inserted as dislocation filters into an InP thin film epitaxially grown on (001) Si substrates by metalorganic chemical vapor deposition. The surface of the InP-on-Si template using 500
Source:Journal of Crystal Growth, Volume 464
Author(s): Bei Shi, Qiang Li, Kei May Lau