1 January 2013
Publication year: 2013
Source:Journal of Crystal Growth, Volume 362
In this research, we successfully prepared p-type ZnO films by rapid thermal annealing (RTA) of As doped ZnO films deposited by magnetron DC sputtering using target made of ZnO mixed with Zn3 As2 powders. From the Hall measurement, the doped ZnO film converted from n-type to p-type after RTA of the films at 1000Zn –2VZn defect, which is responsible for p-type behavior. Further higher annealing temperature increases oxygen vacancies that may compensate the p-type behavior. Thus the RTA temperature is so critical to form AsZn –2VZn while not to form oxygen vacancies. This partially explains that the p-type ZnO is difficult to prepare.
► The ZnO:As film converted to p-type after RTA of the films at 1000Zn –2VZn is responsible for the p-type character for ZnO. ► The RTA temperature is so critical to form p-type ZnO.
Publication year: 2013
Source:Journal of Crystal Growth, Volume 362