Formation of dendritic crystal structures in thin silicon films on silicon dioxide by carbon ion implantation and high intensity large area flash lamp irradiation

Publication date: 15 February 2014
Source:Journal of Crystal Growth, Volume 388
Author(s): M. Voelskow , R. Endler , T. Schumann , A. Mücklich , X. Ou , E.H. Liepack , T. Gebel , A. Peeva , W. Skorupa
In this paper, we use large area light pulse induced melting of deposited thin silicon films on oxidised silicon wafers to prepare coarse grained dendritic crystal structures. The results show that the addition of carbon prevents the agglomeration of the molten silicon films and largely influences the crystallisation process. The low solubility of carbon in liquid silicon and its effect on the silicon melting temperature induces a distinctive lateral dendritic grain growth. XTEM, SEM, AFM and ToF-SIMS investigations have been performed to study the crystallisation process and to characterise the resulting film structure.