LP-MOCVD growth of BGaAsSb thick layers and BGaAsSb/GaAs quantum well structures on GaAs (001) substrates

Publication date: 15 May 2014
Source:Journal of Crystal Growth, Volume 394
Author(s): Zhigang Jia , Qi Wang , Xiaomin Ren , Yifan Wang , Shiwei Cai , Xia Zhang , Yongqing Huang
In this study, BGaAsSb thick layers and BGaAsSb/GaAs quantum wells (QWs) have been grown on GaAs (001) by low pressure metal–organic vapor deposition (LP-MOCVD) for the first time. It has been found that for both GaAs1−y Sb y thick layer and GaAs1−y Sb y /GaAs QWs, the incorporation of boron leads to a decrease in Sb segregation and causes an increased solid Sb content y as well as a higher compressive strain. Similarly, Sb segregation also recedes when the arsenic partial pressure is lowered, and Sb-incorporation efficiency increases significantly. In both cases, the quaternary BGaAsSb alloys cannot be grown lattice-matched to GaAs. In addition, the PL peak wavelength red-shifts when boron is incorporated. This is in accordance with the increased Sb content.