1 January 2013
Publication year: 2013
Source:Journal of Crystal Growth, Volume 362
We attempted to clarify controlling mechanisms of Al-induced layer exchange process of Al and amorphous silicon (a -Si) and microstructures in resultant polycrystalline silicon (poly-Si) thin film by utilizing in situ observation of the growth process. Introduction of a few nm-thick germanium adlayer remarkably reduces crystallization time and affects the grain size of poly-Si films. This is likely to be accompanied by the growth mode transition as suggested by change of Avrami constant. Control of the Al/a -Si interface is of crucial importance to control the growth process.
► Impact of Ge thickness inserted at a -Si/Al on Al-induced layer exchange process was investigated by in situ monitoring. ► Drastic increase of the grain size of poly-Si was observed by insertion of only 1
Publication year: 2013
Source:Journal of Crystal Growth, Volume 362