Development of the vertical Bridgman technique for 6-inch diameter c-axis sapphire growth supported by numerical simulation

Publication date: 15 September 2014
Source:Journal of Crystal Growth, Volume 402
Author(s): Chihiro Miyagawa , Takumi Kobayashi , Toshinori Taishi , Keigo Hoshikawa
Based on the growth of 3-inch diameter c-axis sapphire using the vertical Bridgman (VB) technique, numerical simulations were made and used to guide the growth of a 6-inch diameter sapphire. A 2D model of the VB hot-zone was constructed, the seeding interface shape of the 3-inch diameter sapphire as revealed by green laser scattering was estimated numerically, and the temperature distributions of two VB hot-zone models designed for 6-inch diameter sapphire growth were numerically simulated to achieve the optimal growth of large crystals. The hot-zone model with one heater was selected and prepared, and 6-inch diameter c-axis sapphire boules were actually grown, as predicted by the numerical results.