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Influences of growth parameters on the reaction pathway during GaN synthesis

Publication date: 15 January 2018 Source:Journal of Crystal Growth, Volume 482 Author(s): Zhi Zhang, Zhongyi Liu, Haisheng Fang Gallium nitride (GaN) film growth is a complicated physical and chemical...

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GeSn growth kinetics in reduced pressure chemical vapor deposition from Ge2H6...

Publication date: 15 January 2018 Source:Journal of Crystal Growth, Volume 482 Author(s): J. Aubin, J.M. Hartmann We have investigated the low temperature epitaxy of high Sn content GeSn alloys in a...

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Comparison of GaP nanowires grown from Au and Sn vapor-liquid-solid catalysts...

Publication date: 15 January 2018 Source:Journal of Crystal Growth, Volume 482 Author(s): Sudarat Lee, Wen Wen, Quintin Cheek, Stephen Maldonado Gallium phosphide (GaP) nanowire film electrodes have...

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Facile synthesis of Co3O4 hexagonal plates by flux method

Publication date: 15 January 2018 Source:Journal of Crystal Growth, Volume 482 Author(s): Ji-Long Han, Qing-Fen Meng, Sheng-Li Gao Using a novel flux method, a hexagonal plate of Co3O4 was directly...

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Asymmetric, compressive, SiGe epilayers on Si grown by lateral liquid-phase...

Publication date: 15 January 2018 Source:Journal of Crystal Growth, Volume 482 Author(s): Andrew J. O'Reilly, Nathaniel Quitoriano Uniaxially strained Si1−xGex channels have been proposed as a...

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Digitally grown AlInAsSb for high gain separate absorption, grading, charge,...

Publication date: 15 January 2018 Source:Journal of Crystal Growth, Volume 482 Author(s): Yuexi Lyu, Xi Han, Yaoyao Sun, Zhi Jiang, Chunyan Guo, Wei Xiang, Yinan Dong, Jie Cui, Yuan Yao, Dongwei...

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MBE growth of few-layer 2H-MoTe2 on 3D substrates

Publication date: 15 January 2018 Source:Journal of Crystal Growth, Volume 482 Author(s): Suresh Vishwanath, Aditya Sundar, Xinyu Liu, Angelica Azcatl, Edward Lochocki, Arthur R. Woll, Sergei...

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In-situ studies of multicrystalline silicon nucleation and growth on α- and...

Publication date: 15 January 2018 Source:Journal of Crystal Growth, Volume 482 Author(s): Espen Undheim, Kensaku Maeda, Lars Arnberg, Randi Holmestad, Kozo Fujiwara, Marisa Di Sabatino The growth of...

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Growth rate independence of Mg doping in GaN grown by plasma-assisted MBE

Publication date: 15 January 2018 Source:Journal of Crystal Growth, Volume 482 Author(s): Henryk Turski, Grzegorz Muzioł, Marcin Siekacz, Pawel Wolny, Krzesimir Szkudlarek, Anna Feduniewicz-Żmuda,...

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Publication date: 1 January 2018 Source:Journal of Crystal Growth, Volume 481

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Solid state single crystal growth of three-dimensional faceted LaFeAsO crystals

Publication date: 1 February 2018 Source:Journal of Crystal Growth, Volume 483 Author(s): Rhea Kappenberger, Saicharan Aswartham, Francesco Scaravaggi, Christian G.F. Blum, Mihai I. Sturza, Anja U.B....

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Numerical modeling study on the epitaxial growth of silicon from dichlorosilane

Publication date: 1 February 2018 Source:Journal of Crystal Growth, Volume 483 Author(s): Imama Zaidi, Yeon-Ho Jang, Dong Guk Ko, Ik–Tae Im Computer simulations play an important role in determining...

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Editorial Board

Publication date: 15 January 2018 Source:Journal of Crystal Growth, Volume 482

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Crystal growth, physical properties and computational insights of...

Publication date: 1 February 2018 Source:Journal of Crystal Growth, Volume 483 Author(s): M.S. Kajamuhideen, K. Sethuraman, K. Ramamurthi, P. Ramasamy A splendid nonlinear optical single crystals...

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In-situ growth mode control of AlN on SiC substrate by sublimation closed...

Publication date: 1 February 2018 Source:Journal of Crystal Growth, Volume 483 Author(s): Daichi Dojima, Koji Ashida, Tadaaki Kaneko For the growth of AlN single crystal with large diameter and low...

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Control of interface shape during high melting sesquioxide crystal growth by...

Publication date: 1 February 2018 Source:Journal of Crystal Growth, Volume 483 Author(s): Kaiwei Hu, Lili Zheng, Hui Zhang During crystal growth in heat exchanger method (HEM) system, the shape of the...

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Control of optical properties of YAG crystals by thermal annealing

Publication date: 1 February 2018 Source:Journal of Crystal Growth, Volume 483 Author(s): S. Tkachenko, P. Arhipov, I. Gerasymov, D. Kurtsev, S. Vasyukov, V. Nesterkina, N. Shiran, P. Mateichenko, O....

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Investigation on synthesis, growth, structure and physical properties of...

Publication date: 1 February 2018 Source:Journal of Crystal Growth, Volume 483 Author(s): N. Karunagaran, P. Ramasamy Silver Gallium Indium Sulfide (AgGa0.5In0.5S2) belongs to the family of AIBIIIC2...

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Crystal growth and scintillation performance of Cs2HfCl6 and Cs2HfCl4Br2

Publication date: 1 February 2018 Source:Journal of Crystal Growth, Volume 483 Author(s): Stephanie Lam, Christo Guguschev, Arnold Burger, Maria Hackett, Shariar Motakef The crystal growth and...

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Computational analysis of heat transfer, thermal stress and dislocation...

Publication date: 1 February 2018 Source:Journal of Crystal Growth, Volume 483 Author(s): Mohammad Hossein Tavakoli, Elahe Kabiri Renani, Mohtaram Honarmandnia, Mahdi Ezheiyan In this paper, a set of...

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