15 January 2013
Publication year: 2013
Source:Journal of Crystal Growth, Volume 363
Compositionally undulating step-graded InAs y P1−y buffer layers were grown by metal-organic chemical vapor deposition (MOCVD) to relax the strain of In0.68 Ga0.32 As with InP substrate. The strain relaxation and surface morphology are strongly dependent on the thickness of each step-graded buffer layer. With an optimized buffer thickness design, a 3-μm-thick In0.68 Ga0.32 As epilayer shows a high crystal quality with no measurable tetragonal distortion and a very low surface roughness of 2.74 y P1−y buffers grown on InP are very promising to be virtual substrates of infrared and high speed metamorphic devices.
► Compositionally undulating step-graded InAs y P1−y buffer layers were grown to relax the strain of In0.68 Ga0.32 As with InP substrate. ► The thickness of InAs y P1−y buffer layers has a great influence on In0.68 Ga0.32 As crystal quality and surface morphology. ► A very low surface roughness of 2.74
Publication year: 2013
Source:Journal of Crystal Growth, Volume 363