15 January 2013
Publication year: 2013
Source:Journal of Crystal Growth, Volume 363
We demonstrate coincident-site lattice-matched growth of InGaAs layers on (001) MgAl2 O4 spinel substrates, using a 45° rotation between the lattices, by molecular beam epitaxy. This is the first step towards easily removable multijunction solar cells with inert, reusable substrates. High-resolution cross-sectional transmission electron microscopy (TEM) measurements indicate that microtwins originate at the InGaAs/spinel interface, but tend to annihilate leaving the upper parts of layers relatively twin-free. Plan-view TEM indicates a high density of threading dislocations. InGaAs layers grown at elevated temperatures show improved transport properties, with majority-carrier mobilities approaching typical values for homoepitaxial GaAs on GaAs substrates. Simple p –i –n junctions show photovoltaic efficiencies above 1%.
► Lattice-matched InGaAs growth by molecular beam epitaxy. ► Coincident-site lattice match of InGaAs to MgAl2 O4 substrates. ► High density of planar defects but good overall material quality. ► Working lattice-matched InGaAs solar cell on oxide substrate.
Publication year: 2013
Source:Journal of Crystal Growth, Volume 363