Corrigendum to “MOCVD-grown compressively strained C-doped InxGa1−xAs1−ySby with high-In/Sb content for very low turn-on-voltage InP-based DHBTs” [J. Cryst. Growth 404 (2014) 172–176]

Publication date: 15 August 2015
Source:Journal of Crystal Growth, Volume 424
Author(s): Takuya Hoshi , Norihide Kashio , Hiroki Sugiyama , Haruki Yokoyama , Kenji Kurishima , Minoru Ida , Hideaki Matsuzaki , Masaki Kohtoku , Hideki Gotoh