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Oxygen-radical-assisted pulsed-laser deposition of β-Ga2O3 and...

Publication date: 15 August 2015 Source:Journal of Crystal Growth, Volume 424 Author(s): Ryo Wakabayashi , Takayoshi Oshima , Mai Hattori , Kohei Sasaki , Takekazu Masui , Akito Kuramata , Shigenobu...

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Examination of the interaction between liquid silicon and bulk silicon carbide

Publication date: 15 September 2015 Source:Journal of Crystal Growth, Volume 426 Author(s): J. Roger , A. Marchais , Y. Le Petitcorps Little information is available about the evolution of SiC in the...

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Synthesis, growth, structural, optical and thermal properties of a new...

Publication date: 15 September 2015 Source:Journal of Crystal Growth, Volume 426 Author(s): T. Jayanalina , G. Rajarajan , K. Boopathi , K. Sreevani A new organic nonlinear optical crystal...

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Corrigendum to “MOCVD-grown compressively strained C-doped InxGa1−xAs1−ySby...

Publication date: 15 August 2015 Source:Journal of Crystal Growth, Volume 424 Author(s): Takuya Hoshi , Norihide Kashio , Hiroki Sugiyama , Haruki Yokoyama , Kenji Kurishima , Minoru Ida , Hideaki...

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Editorial Board

Publication date: 15 August 2015 Source:Journal of Crystal Growth, Volume 424

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The growth of Sea-urchin-like AlN nanostructures by modified CVD and their...

Publication date: 15 September 2015 Source:Journal of Crystal Growth, Volume 426 Author(s): Lu׳an Guo , Guangde Chen , Youzhang Zhu , Xiangyang Duan , Honggang Ye AlN complex nanostructures were...

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Crystal growth of barium nitrate on thiol-terminated self-assembled...

Publication date: 15 September 2015 Source:Journal of Crystal Growth, Volume 426 Author(s): Fei Lu , Bing Zhao , Ran Li , Weidong Ruan Self-assembled monolayers (SAMs) of...

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Novel solvents for the single crystal growth of germanate phases by the flux...

Publication date: 15 September 2015 Source:Journal of Crystal Growth, Volume 426 Author(s): V.A. Ivanov , M.O. Marychev , P.V. Andreev , I. Koseva , P. Tzvetkov , V. Nikolov A series of alkali-borate...

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The deposition parameters in the synthesis of CVD microcrystalline diamond...

Publication date: 15 September 2015 Source:Journal of Crystal Growth, Volume 426 Author(s): Tao Zhang , Xuan Liu , Fanghong Sun , Zhiming Zhang In the present work, microcrystalline diamond powders...

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Empirical correlations for natural convection, Δ and keff

Publication date: 15 September 2015 Source:Journal of Crystal Growth, Volume 426 Author(s): A.G. Ostrogorsky Natural convection in semiconductor melts is quantified using empirical correlations for...

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Formation of Ge dots on Si(100) using reaction of Ge with sub-monolayer...

Publication date: 15 September 2015 Source:Journal of Crystal Growth, Volume 426 Author(s): Yuhki Itoh , Shinji Hatakeyama , Tomoyuki Kawashima , Katsuyoshi Washio To form small and dense Ge dots, an...

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MOVPE growth of Ga(AsBi)/GaAs using different metalorganic precursors

Publication date: 15 September 2015 Source:Journal of Crystal Growth, Volume 426 Author(s): L. Nattermann , P. Ludewig , L. Meckbach , B. Ringler , D. Keiper , C. von Hänisch , W. Stolz , K. Volz In...

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Heterogenous nucleation in a cave with an apex and iso-curvature lateral surface

Publication date: 15 September 2015 Source:Journal of Crystal Growth, Volume 426 Author(s): Xiang-Ming Li , Qing-Hui Liu A cave surface for heterogeneous nucleation is always assumed as a concave...

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Chemical vapor deposition of Si:C and Si:C:P films—Evaluation of material...

Publication date: 15 September 2015 Source:Journal of Crystal Growth, Volume 426 Author(s): Sathish Kumar Dhayalan , Roger Loo , Andriy Hikavyy , Erik Rosseel , Hugo Bender , Olivier Richard ,...

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A study of the growth rate of GaSb using TEGa and TMSb or TESb

Publication date: 15 September 2015 Source:Journal of Crystal Growth, Volume 426 Author(s): Rajaram Bhat , Catherine G. Caneau The growth rate of gallium antimonide using triethylgallium and either...

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Optical in situ calibration of Sb for growing disordered GaInP by MOVPE

Publication date: 15 September 2015 Source:Journal of Crystal Growth, Volume 426 Author(s): Enrique Barrigón , Laura Barrutia , Ignacio Rey-Stolle Reflectance Anisotropy Spectroscopy (RAS) was...

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A new AlON buffer layer for RF-MBE growth of AlN on a sapphire substrate

Publication date: 1 September 2015 Source:Journal of Crystal Growth, Volume 425 Author(s): T. Makimoto , K. Kumakura , M. Maeda , H. Yamamoto , Y. Horikoshi A 20nm-thick AlON buffer layer consisting...

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Low temperature AlN growth by MBE and its application in HEMTs

Publication date: 1 September 2015 Source:Journal of Crystal Growth, Volume 425 Author(s): Faiza Afroz Faria , Kazuki Nomoto , Zongyang Hu , Sergei Rouvimov , Huili (Grace) Xing , Debdeep Jena Low...

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High growth speed of gallium nitride using ENABLE-MBE

Publication date: 1 September 2015 Source:Journal of Crystal Growth, Volume 425 Author(s): J.J. Williams , A.M. Fischer , T.L. Williamson , S. Gangam , N.N. Faleev , M.A. Hoffbauer , C.B. Honsberg...

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Molecular beam epitaxy of free-standing wurtzite AlxGa1−xN layers

Publication date: 1 September 2015 Source:Journal of Crystal Growth, Volume 425 Author(s): S.V. Novikov , C.R. Staddon , R.W. Martin , A.J. Kent , C.T. Foxon Recent developments with group III...

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