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Channel: ScienceDirect Publication: Journal of Crystal Growth
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Crystal quality of InGaAs/AlAs/InAlAs coupled double quantum wells for intersubband transition devices

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Publication date: 1 September 2015
Source:Journal of Crystal Growth, Volume 425
Author(s): Shin-ichiro Gozu , Teruo Mozume
The crystal quality of coupled double quantum wells (CDQWs) having different barrier structures was investigated by evaluating optical properties and structural interface quality. Photoluminescence (PL) spectra revealed that the CDQW samples with an AlAs/InAlAs combined barrier (CDQW CB ) exhibited a narrower PL emission peak than those with an AlAsSb barrier. CDQW CB also showed the best excitation dependence of PL intensity. X-ray reflectivity (XRR) measurements revealed that better interface quality was confirmed in CDQW CB . We conclude that CDQW CB has the best crystal quality among those evaluated.


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