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Indium incorporation dynamics in N-polar InAlN thin films grown by...

Publication date: 1 September 2015 Source:Journal of Crystal Growth, Volume 425 Author(s): M.T. Hardy , D.F. Storm , N. Nepal , D.S. Katzer , B.P. Downey , D.J. Meyer N-polar InAlN thin films were...

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Low-temperature growth of InGaN films over the entire composition range by MBE

Publication date: 1 September 2015 Source:Journal of Crystal Growth, Volume 425 Author(s): Chloe A.M. Fabien , Brendan P. Gunning , W. Alan Doolittle , Alec M. Fischer , Yong O. Wei , Hongen Xie ,...

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Monolayer-by-monolayer compositional analysis of InAs/InAsSb superlattices...

Publication date: 1 September 2015 Source:Journal of Crystal Growth, Volume 425 Author(s): M.R. Wood , K. Kanedy , F. Lopez , M. Weimer , J.F. Klem , S.D. Hawkins , E.A. Shaner , J.K. Kim We use...

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Suppression of photoluminescence from wetting layer of InAs quantum dots...

Publication date: 1 September 2015 Source:Journal of Crystal Growth, Volume 425 Author(s): X.M. Lu , S. Matsubara , Y. Nakagawa , T. Kitada , T. Isu Self-assembled InAs quantum dots (QDs), without and...

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Crystal quality of InGaAs/AlAs/InAlAs coupled double quantum wells for...

Publication date: 1 September 2015 Source:Journal of Crystal Growth, Volume 425 Author(s): Shin-ichiro Gozu , Teruo Mozume The crystal quality of coupled double quantum wells (CDQWs) having different...

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Crystal structure of low-temperature-grown In0.45Ga0.55As on an InP substrate

Publication date: 1 September 2015 Source:Journal of Crystal Growth, Volume 425 Author(s): Yoriko Tominaga , Yuki Tomiyasu , Yutaka Kadoya We grew low-temperature-grown (LTG) In0.45Ga0.55As on an InP...

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Structural properties of AlGaP films on GaP grown by gas-source...

Publication date: 1 September 2015 Source:Journal of Crystal Growth, Volume 425 Author(s): S. Dadgostar , E.H. Hussein , J. Schmidtbauer , T. Boeck , F. Hatami , W.T. Masselink The growth of...

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Effect of bismuth on structural and electrical properties of InAs films grown...

Publication date: 1 September 2015 Source:Journal of Crystal Growth, Volume 425 Author(s): H. Zhao , A. Malko , Z.H. Lai InAs films were grown on GaAs substrates by molecular beam epitaxy (MBE)...

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Si-doped AlGaAs/GaAs(631)A heterostructures grown by MBE as a function of the...

Publication date: 1 September 2015 Source:Journal of Crystal Growth, Volume 425 Author(s): Víctor-Hugo Méndez-García , S. Shimomura , A.Yu. Gorbatchev , E. Cruz-Hernández , D. Vázquez-Cortés The...

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InAs nanowires with AlxGa1−xSb shells for band alignment engineering

Publication date: 1 September 2015 Source:Journal of Crystal Growth, Volume 425 Author(s): Torsten Rieger , Detlev Grützmacher , Mihail Ion Lepsa InAs nanowires surrounded by Al x Ga1−x Sb shells...

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Low temperature transport property of the InSb and InAsSb quantum wells with...

Publication date: 1 September 2015 Source:Journal of Crystal Growth, Volume 425 Author(s): I. Shibasaki , S. Ishida , H. Geka , T. Manago We investigated difference in the transport properties between...

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Growth variations and scattering mechanisms in metamorphic...

Publication date: 1 September 2015 Source:Journal of Crystal Growth, Volume 425 Author(s): Chong Chen , Ian Farrer , Stuart N. Holmes , Francois Sfigakis , Marc P. Fletcher , Harvey E. Beere , David...

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Improved electron transport properties of InSb quantum well structure using...

Publication date: 1 September 2015 Source:Journal of Crystal Growth, Volume 425 Author(s): S. Fujikawa , T. Taketsuru , D. Tsuji , T. Maeda , H.I. Fujishiro We investigated a high-quality novel AlInSb...

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Unintentional boron contamination of MBE-grown GaInP/AlGaInP quantum wells

Publication date: 1 September 2015 Source:Journal of Crystal Growth, Volume 425 Author(s): Antti Tukiainen , Jari Likonen , Lauri Toikkanen , Tomi Leinonen The effects of unintentional boron...

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A study of MBE growth-related defects in InAs/GaSb type-II supperlattices for...

Publication date: 1 September 2015 Source:Journal of Crystal Growth, Volume 425 Author(s): Olga Klin , Noam Snapi , Yossi Cohen , Eliezer Weiss The performance of focal plane arrays type-II InAs/GaSb...

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Defect Creation in InGaAs/GaAs Multiple Quantum Wells – II. Optical Properties

Publication date: 1 September 2015 Source:Journal of Crystal Growth, Volume 425 Author(s): Matthias M. Karow , Nikolai N. Faleev , Aymeric Maros , Christiana B. Honsberg The optical properties of...

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Defect creation in InGaAs/GaAs multiple quantum wells–I. Structural properties

Publication date: 1 September 2015 Source:Journal of Crystal Growth, Volume 425 Author(s): Matthias M. Karow , Nikolai N. Faleev , David J. Smith , Christiana B. Honsberg We present a systematic study...

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Overgrowth of wrinkled InGaAs membranes using molecular beam epitaxy

Publication date: 1 September 2015 Source:Journal of Crystal Growth, Volume 425 Author(s): S. Filipe Covre da Silva , E.M. Lanzoni , A. Malachias , Ch. Deneke Partly released InGaAs layers forming a...

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AlxIn1−xAsySb1−y alloys lattice matched to InAs(100) grown by molecular beam...

Publication date: 1 September 2015 Source:Journal of Crystal Growth, Volume 425 Author(s): J.S. Rojas-Ramirez , S. Wang , R. Contreras-Guerrero , M. Caro , K. Bhatnagar , M. Holland , R. Oxland , G....

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Growth of InAs–InAsSb SLS through the use of digital alloys

Publication date: 1 September 2015 Source:Journal of Crystal Growth, Volume 425 Author(s): T. Schuler-Sandy , B. Klein , L. Casias , S. Mathews , C. Kadlec , Z. Tian , E. Plis , S. Myers , S. Krishna...

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