Unintentional boron contamination of MBE-grown GaInP/AlGaInP quantum wells

Publication date: 1 September 2015
Source:Journal of Crystal Growth, Volume 425
Author(s): Antti Tukiainen , Jari Likonen , Lauri Toikkanen , Tomi Leinonen
The effects of unintentional boron contamination on optical properties of GaInP/AlGaInP quantum well structures grown by molecular beam epitaxy (MBE) are reported. Photoluminescence and secondary-ion mass spectrometry (SIMS) measurements revealed that the optical activity of boron-contaminated quantum wells is heavily affected by the amount of boron in GaInP/AlGaInP heterostructures. The boron concentration was found to increase when cracking temperature of the phosphorus source was increased. Boron incorporation was enhanced also when aluminum was present in the material.