Available online 24 January 2013
Publication year: 2013
Source:Journal of Crystal Growth
Selective area growth of InAs nanostructures on faceted GaAs microstructures by migration enhanced epitaxy is studied. By an optimization of the growth conditions and a study of the facet development, well-defined GaAs microstructures with facets mostly belonging to the crystal plane families {01n }, {11n } and (001) are fabricated. Subsequently deposited InAs shows a preferred nucleation on (001) top facets as well as on {012}/{013} and {011} facet boundaries. By the understanding of the InAs nucleation mechanism, precisely positioned In(Ga)As/GaAs nanostructures such as quantum dots and quantum dot chains are achieved. To investigate the interface properties, transmission electron microscopy and energy-dispersive x-ray spectroscopy measurements are performed. The measurements reveal a relatively high incorporation of Ga into the InAs nanostructures even for InAs deposited at a low growth temperature of 470
► We investigate selective area growth of InAs on GaAs by migration enhanced epitaxy. ► Well-defined faceted GaAs microstructure templates are fabricated. ► Subsequent nucleation of InAs on faceted GaAs templates is studied. ► Precise position control of InAs quantum structures on faceted GaAs is achieved.
Publication year: 2013
Source:Journal of Crystal Growth