The effect of material purity on the optical and scintillation properties of...
Available online 24 January 2013 Publication year: 2013Source:Journal of Crystal Growth Large, 10cm-size, single crystals of trans-stilbene were grown for the first time from solution by a temperature...
View ArticleSelective area growth of InAs nanostructures on faceted GaAs microstructures...
Available online 24 January 2013 Publication year: 2013Source:Journal of Crystal Growth Selective area growth of InAs nanostructures on faceted GaAs microstructures by migration enhanced epitaxy is...
View ArticleFormation of large-grain-sized BaSi2 epitaxial layers grown on Si(111) by...
Available online 29 January 2013 Publication year: 2013Source:Journal of Crystal Growth BaSi2 epitaxial films were grown on Si(111) substrates by a two-step growth method including reactive deposition...
View ArticleCombined global 2D - local 3D modeling of the industrial Czochralski silicon...
Available online 29 January 2013 Publication year: 2013Source:Journal of Crystal Growth A global, axisymmetric thermal model of a Czochralski furnace is coupled to an external, local, 3D,...
View ArticlevThe Effect of Anisotropic Surface Tension on the interface Evolution of a...
Available online 30 January 2013 Publication year: 2013Source:Journal of Crystal Growth We study the effect of anisotropic surface tension on the interface evolution of a particle growing in the...
View ArticleEffects of different substrate surface modifications on the epitaxial ZnO/Si
Available online 30 January 2013 Publication year: 2013Source:Journal of Crystal Growth To produce high quality ZnO/Si for the applications in short wavelength optoelectronic devices, the effects of...
View ArticleHigh-quality SiGe films grown with compositionally graded buffer layers for...
Available online 31 January 2013 Publication year: 2013Source:Journal of Crystal Growth In this study, we fabricated strain-relaxed Si0.58Ge0.42 thin films on Si substrates by molecular beam epitaxy...
View ArticleHighly efficient and stable implementation of Alexander-Haasen model for...
Available online 31 January 2013 Publication year: 2013Source:Journal of Crystal Growth To effectively simulate the time evolution of the dislocation density during the crystal growth process under...
View ArticleLow-temperature growth of highly c-oriented GaN films on Cu coated glass...
Available online 31 January 2013 Publication year: 2013Source:Journal of Crystal Growth Highly c-axis oriented GaN films were deposited on Cu coated glass substrates using electron cyclotron resonance...
View ArticleEffect of Thermocouple Position on Temperature Field in Nitride MOCVD Reactor
Available online 31 January 2013 Publication year: 2013Source:Journal of Crystal Growth By using finite element methods, the distribution of temperature field is simulated in the vertical MOCVD reactor...
View ArticleMisfit management for reduced dislocation formation in epitaxial...
1 February 2013 Publication year: 2013Source:Journal of Crystal Growth, Volume 364 The improved control of lattice strain in the quantum-dot (QD) region of p–i–n structures using a modified epitaxial...
View ArticleThickening of thin laser crystallized silicon films by solid phase epitaxy...
1 February 2013 Publication year: 2013Source:Journal of Crystal Growth, Volume 364 Multicrystalline silicon films up to 2μm thick with grain sizes up to 100μm were prepared on glass substrates by laser...
View ArticleTilt generation and phase separation in metamorphic GaInP buffers grown on...
1 February 2013 Publication year: 2013Source:Journal of Crystal Growth, Volume 364 Compositionally step-graded ((Al)Ga) x In1−x P (x=0.52–0.22) buffers and following In0.3Ga0.7As cap layers are grown...
View ArticleGrowth and characterization of single crystalline Zn0.8–xMg0.2AlxO films with...
1 February 2013 Publication year: 2013Source:Journal of Crystal Growth, Volume 364 Single crystalline Zn0.8− x Mg0.2Al x O thin films were grown on a GaN/Al2O3 template. As the Al content is increased...
View ArticleDependence of N-polar GaN rod morphology on growth parameters during...
1 February 2013 Publication year: 2013Source:Journal of Crystal Growth, Volume 364 Selective area growth of GaN rods by metalorganic vapor phase epitaxy has attracted great interest due to its novel...
View ArticleFerroelectric domain structure of highly textured BiFeO3 microcrystal films...
1 February 2013 Publication year: 2013Source:Journal of Crystal Growth, Volume 364 Microcrystal BiFeO3 films have been prepared on Nb doped SrTiO3 substrate with the hydrothermal method. The...
View ArticleThe prospects for traveling magnetic fields to affect interface shape in the...
1 February 2013 Publication year: 2013Source:Journal of Crystal Growth, Volume 364 The influence of a traveling magnetic field (TMF) on vertical gradient freeze (VGF) growth of cadmium zinc telluride...
View ArticleStudy on twin boundaries and Te particles in CdMnTe crystals for nuclear...
1 February 2013 Publication year: 2013Source:Journal of Crystal Growth, Volume 364 Electron backscatter diffraction (EBSD) and Raman scattering were used to characterize twins and Te particles in...
View ArticleA comprehensive diagram to grow (0001)InGaN alloys by molecular beam epitaxy
1 February 2013 Publication year: 2013Source:Journal of Crystal Growth, Volume 364 The composition, strain and surface morphology of (0001)InGaN layers are investigated as a function of growth...
View ArticleIntrinsic limits governing MBE growth of Ga-assisted GaAs nanowires on Si(111)
1 February 2013 Publication year: 2013Source:Journal of Crystal Growth, Volume 364 Diffusion-enhanced and desorption-limited growth regimes of Ga-assisted GaAs nanowires were identified. In the latter...
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