Available online 31 January 2013
Publication year: 2013
Source:Journal of Crystal Growth
In this study, we fabricated strain-relaxed Si0.58 Ge0.42 thin films on Si substrates by molecular beam epitaxy (MBE) for heterojunction solar cell applications. A combined set of stepwise Si1−x Ge x buffer layers and a Si0.51 Ge0.49 strain-inverted layer, in conjunction with rapid thermal annealing (RTA), were employed to confine the dislocations within the buffer layers. Structural characterization of the samples revealed a low dislocation density of less than 105
► We fabricated strain-relaxed Si0.58 Ge0.42 thin films grown with graded buffer layer by MBE. ► We successfully fabricated low dislocation density (105 0.58 Ge0.42 heterojunction solar cells. ► SiGe solar cell showed both an extended absorption edge and improved diode characteristics.
Publication year: 2013
Source:Journal of Crystal Growth