1 February 2013
Publication year: 2013
Source:Journal of Crystal Growth, Volume 364
Single crystalline Zn0.8− x Mg0.2 Al x O thin films were grown on a GaN/Al2 O3 template. As the Al content is increased from 0 to 0.06, the optical band gap increased from 3.62 O4 in the case of ZnMgAlO/GaN and cubic MgO in the case of ZnMgO/GaN. It was proposed that the MgAl2 O4 layer, with low lattice mismatch of ∼7% against the GaN substrate, acted as the buffer layer to correlate the film and the substrate, resulting in growth of the single crystalline thin films in the case of the ZnMgAlO/GaN system.
► Single crystalline Zn0.8− x Mg0.2 Al x O thin films were grown on a GaN/Al2 O3 template. ► We studied effect of Al concentration on the characteristics of Zn0.8− x Mg0.2 Al x O films. ► It was observed that interfacial layers formed between the thin films and the GaN/Al2 O3 template by TEM.
Publication year: 2013
Source:Journal of Crystal Growth, Volume 364