1 February 2013
Publication year: 2013
Source:Journal of Crystal Growth, Volume 364
The composition, strain and surface morphology of (0001)InGaN layers are investigated as a function of growth temperature (460–645
► Study of In incorporation as functions of growth temperature and impinging In flux. ► InGaN surface morphology strongly correlated to the growth regime. ► InGaN growth diagram constructed. Growth regimes’ borders analytically determined. ► InGaN epilayer relaxation rate dependent on growth regime. ► Difference in In incorporation into InAlN and InGaN explained by their decomposition parameters.
Publication year: 2013
Source:Journal of Crystal Growth, Volume 364