Spatial distribution of structural defects in Cz-seeded directionally solidified silicon ingots: An etch pit study

Publication date: 1 February 2018
Source:Journal of Crystal Growth, Volume 483
Author(s): A. Lantreibecq, M. Legros, N. Plassat, J.P. Monchoux, E. Pihan
The PV properties of wafers processed from Cz-seeded directionally solidified silicon ingots suffer from variable structural defects. In this study, we draw an overview on the types of structural defects encountered in the specific case of full 〈1 0 0〉 oriented growth. We found micro twins, background dislocations, and subgrains boundaries. We discuss the possible links between thermomechanical stresses and growth processes with spatial evolution of both background dislocation densities and subgrain boundaries length.