1 May 2013
Publication year: 2013
Source:Journal of Crystal Growth, Volume 370
This paper summarizes results of the epitaxial growth of Ga(AsBi) by metal organic vapor phase epitaxy (MOVPE) using all-liquid group V precursors. Ga(AsBi)/GaAs multi quantum well (MQW) samples are grown on GaAs (001) substrates at temperatures as low as 375
► The growth of Ga(AsBi)/GaAs MQWs by MOVPE is investigated. ► Structural analyses show that MQWs with good crystalline quality are realized. ► Under specific growth conditions no Bi-droplets occur. ► Room temperature photoluminescence is observed already after growth.
Publication year: 2013
Source:Journal of Crystal Growth, Volume 370