Growth of single-crystalline bismuth antimony telluride nanoplates on the...
Available online 2 April 2013 Publication year: 2013Source:Journal of Crystal Growth We have reported the growth of single-crystalline bismuth antimony telluride nanoplates on the surface of...
View ArticleImproving the composition uniformity of Au-catalyzed InGaAs nanowires on silicon
1 June 2013 Publication year: 2013Source:Journal of Crystal Growth, Volume 372 Spatial distribution of indium (In) atoms in ternary In x Ga1−x As nanowires (NWs) was investigated by the...
View ArticleXRMON-GF: A novel facility for solidification of metallic alloys with in situ...
Available online 2 April 2013 Publication year: 2013Source:Journal of Crystal Growth As most of the phenomena involved during the growth of metallic alloys from the melt are dynamic, in situ and...
View ArticleImaging transport phenomena during lysozyme protein crystal growth by the...
1 June 2013 Publication year: 2013Source:Journal of Crystal Growth, Volume 372 The present study reports the transport process that occurs during the growth of lysozyme protein crystals by the hanging...
View ArticleTwo-step lateral growth of GaN for improved emission from blue light-emitting...
Available online 3 April 2013 Publication year: 2013Source:Journal of Crystal Growth A two-step growth approach based on facet-controlled epitaxial lateral growth and the application of silica...
View ArticleCharacterizing and Modeling the Evolution of Silicon Oxide Precipitates...
Available online 3 April 2013 Publication year: 2013Source:Journal of Crystal Growth The effect of oxidizing annealing cycles on Si high-quality wafers (as used to monitor IC production tools or SOI...
View ArticleMOVPE-grown InAs/AlAs0.16Sb0.84/InAs and InAs/AlAs0.16Sb0.84/GaSb...
Available online 3 April 2013 Publication year: 2013Source:Journal of Crystal Growth We demonstrate MOVPE-growth of InAs/AlAs0.16Sb0.84/GaSb and InAs/AlAs0.16Sb0.84/InAs heterostructures of excellent...
View ArticleControlled synthesis of spherical and cubic magnetite nanocrystal clusters
Available online 3 April 2013 Publication year: 2013Source:Journal of Crystal Growth Spherical Fe3O4 nanocrystal clusters were prepared via a simple solvothermal method using FeCl2·4H2O and NaOH as...
View ArticleOptical study of GaAsN/GaAs and InGaAsN/GaAs T-shaped quantum wires grown by...
1 May 2013 Publication year: 2013Source:Journal of Crystal Growth, Volume 370 GaAsN/GaAs and InGaAsN/GaAs T-shaped quantum wires (T-QWRs) grown by metal-organic vapor phase epitaxy have been...
View ArticleHighly p-typed superlattices consist of undoped InAs and carbon-doped GaAs...
1 May 2013 Publication year: 2013Source:Journal of Crystal Growth, Volume 370 The strained-layer-superlattice (SLS) consisting of undoped InAs and carbon-doped GaAs (GaAs:C) layers were successfully...
View ArticleGrowth of (BGa)As, (BGa)P, (BGa)(AsP) and (BGaIn)P by MOVPE
1 May 2013 Publication year: 2013Source:Journal of Crystal Growth, Volume 370 The boron containing III/V-semiconductors (BGa)As, (BGa)P, (BGa)(AsP) and (BGaIn)P are grown by...
View ArticleMOVPE growth of Ga(AsBi)/GaAs multi quantum well structures
1 May 2013 Publication year: 2013Source:Journal of Crystal Growth, Volume 370 This paper summarizes results of the epitaxial growth of Ga(AsBi) by metal organic vapor phase epitaxy (MOVPE) using...
View ArticleOptical characterization of a GaAsSb/GaAs/GaAsP strain-compensated quantum...
1 May 2013 Publication year: 2013Source:Journal of Crystal Growth, Volume 370 Optical properties of a strained GaAs0.64Sb0.36/GaAs and a strain-compensated GaAs0.64Sb0.36/GaAs/GaAs0.79P0.21 triple...
View ArticleAP-MOVPE GaInSb: Influence of V/III ratio on quality and indium incorporation
1 May 2013 Publication year: 2013Source:Journal of Crystal Growth, Volume 370 The growth of atmospheric pressure metal-organic vapour phase epitaxial (AP-MOVPE) GaSb and Ga1−x In x Sb layers with...
View ArticleIn situ study of Ge(100) surfaces with tertiarybutylphosphine supply in vapor...
1 May 2013 Publication year: 2013Source:Journal of Crystal Growth, Volume 370 GaInP nucleation on Ge(100) often starts by annealing of the Ge(100) substrates under supply of phosphorus precursors....
View ArticleCharacterization of deep levels in GaInP on Ge and Ge-on-Si substrates by...
1 May 2013 Publication year: 2013Source:Journal of Crystal Growth, Volume 370 We investigated the deep level photoluminescence and cathodoluminescence emissions from GaInP grown on Ge and Ge-on-Si...
View ArticleCharacteristics of bulk InGaAsSbN/GaAs grown by metalorganic vapor phase...
1 May 2013 Publication year: 2013Source:Journal of Crystal Growth, Volume 370 Bulk, lattice-matched dilute-nitride-antimonide materials were grown by metalorganic vapor phase epitaxy (MOVPE) for...
View ArticleOptimized interfacial management for InGaAs/GaAsP strain-compensated...
1 May 2013 Publication year: 2013Source:Journal of Crystal Growth, Volume 370 In this paper, the interfacial management for InGaAs/GaAsP strain-compensated superlattice (SL) structures with thin wells...
View ArticleStructural characterization of selectively grown multilayers with new high...
1 May 2013 Publication year: 2013Source:Journal of Crystal Growth, Volume 370 This paper reports the latest improvements performed on structural characterization by high resolution x-ray diffraction...
View ArticleMOVPE-grown AlxGa1−xAsyP1−y strain compensating layers on GaAs
1 May 2013 Publication year: 2013Source:Journal of Crystal Growth, Volume 370 We demonstrate the substitution of Al0.85GaAs layers, used as claddings in edge-emitting diode lasers, with tensile...
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