1 May 2013
Publication year: 2013
Source:Journal of Crystal Growth, Volume 370
In this work, selective area growth has been used for the realization of InP based photonic integrated circuits (PICs). To predict the strain, thickness and bandgap energy variations over large and high-density multifunctional arrays, it is necessary to precisely design the shapes and positions of the dielectric masks by computational modeling. To address the mask layout density and complexity in both longitudinal and transversal direction, the use of three dimensional vapor phase model was mandatory. In each SAG region used for individual component processing, the calculated data were compared to experimental ones acquired by synchrotron-based microbeam x-ray diffraction and by micro-photoluminescence wavelength mapping. The excellent result concordance shows that both advanced modeling and characterization techniques are of importance for PIC conception and fabrication.
► Large waveguide arrays have been fabricated using the selective area growth technique. ► Numerical modeling was investigated to address the device density and complexity. ► Micro-scale techniques were used to characterize individual components. ► Two and three dimensional modeling have been compared with experimental results. ► Three dimensional modeling has shown excellent agreement with experimental data.
Publication year: 2013
Source:Journal of Crystal Growth, Volume 370