Site-controlled growth of InP/GaInP islands on periodic hole patterns in GaAs...
1 May 2013 Publication year: 2013Source:Journal of Crystal Growth, Volume 370 We present microsphere photolithography in combination with wet chemical etching as a fast and low-cost method to produce...
View ArticleFrom conformal overgrowth to lateral growth of indium arsenide nano...
1 May 2013 Publication year: 2013Source:Journal of Crystal Growth, Volume 370 A methodology for the deposition of lateral InAs nanostructures on silicon by selective area metal organic vapor phase...
View ArticleCharacterization of partially ordered GaInP/GaAs heterointerfaces by the...
1 May 2013 Publication year: 2013Source:Journal of Crystal Growth, Volume 370 The new approach to the characterization of semiconductor interfacial properties by the quantum Hall effect (QHE) and the...
View ArticleGrowth of GaInAs/InP MQW using MOVPE on directly-bonded InP/Si substrate
1 May 2013 Publication year: 2013Source:Journal of Crystal Growth, Volume 370 Thin film InP/Si substrate was fabricated using direct wafer bonding technique. GaInAs/InP MQW layers were grown on this...
View ArticleMicro-characterization and three dimensional modeling of very large waveguide...
1 May 2013 Publication year: 2013Source:Journal of Crystal Growth, Volume 370 In this work, selective area growth has been used for the realization of InP based photonic integrated circuits (PICs). To...
View ArticleEnhanced emission efficiency of green InGaN/GaN multiple quantum wells by...
1 May 2013 Publication year: 2013Source:Journal of Crystal Growth, Volume 370 We report on the effect of surface plasmon on the light emission efficiency of green InGaN/GaN multiple quantum wells...
View ArticleINGAN/GAN based semipolar green converters
1 May 2013 Publication year: 2013Source:Journal of Crystal Growth, Volume 370 In order to achieve highly efficient green light emission, we are investigating the realization of InGaN-based luminescence...
View ArticleImproved performance of semi-polar (11-22) GaN-based light-emitting diodes...
1 May 2013 Publication year: 2013Source:Journal of Crystal Growth, Volume 370 We report on the effectiveness of the in-situ SiN x nanomask in reducing defects in semipolar (11-22) GaN films grown on...
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Manipulation on the optical properties of InGaN/GaN light emitting diodes by...
1 May 2013 Publication year: 2013Source:Journal of Crystal Growth, Volume 370 We report the influence of an InN layer inserted between InGaN and GaN on the optical properties of InGaN/GaN light...
View ArticleOptimizing the growth process of the active zone in GaN based laser...
1 May 2013 Publication year: 2013Source:Journal of Crystal Growth, Volume 370 In x Ga 1 − x N /GaN quantum well (QW) structures grown on c-plane surfaces for long wavelength laser structures have been...
View ArticleGaN based LEDs with semipolar QWs employing embedded sub-micrometer sized...
1 May 2013 Publication year: 2013Source:Journal of Crystal Growth, Volume 370 We present LED structures with embedded semipolar { 10 1 ¯ 1 } quantum wells based on 2-inch c-plane GaN templates grown on...
View ArticleInGaN-based solar cells with a tapered GaN structure
1 May 2013 Publication year: 2013Source:Journal of Crystal Growth, Volume 370 InGaN solar cell structures had a tapered GaN structure at GaN/sapphire interface that was fabricated through a laser...
View ArticleGrowth of thick GaN layer on ZnAl2O4 spinel layer by HVPE
1 May 2013 Publication year: 2013Source:Journal of Crystal Growth, Volume 370 Thick GaN film was grown by hydride vapor phase epitaxy (HVPE) on spinel covered ZnO layer. Single crystal ZnO was grown on...
View ArticleIn-situ growth monitoring of AlInN/AlGaN distributed Bragg reflectors for the...
1 May 2013 Publication year: 2013Source:Journal of Crystal Growth, Volume 370 We have grown lattice matched distributed Bragg reflectors (DBRs) based on up to 45 periods of AlInN and AlGaN λ/4 layers...
View ArticleGrowth of strain-compensated InGaN/AlN multiple quantum wells on GaN by MOVPE
1 May 2013 Publication year: 2013Source:Journal of Crystal Growth, Volume 370 Strain-compensated InGaN/AlN MQWs were grown on a c-plane GaN/sapphire template by MOVPE at 780°C. After optimization of...
View ArticleDefect states of a-plane GaN grown on r-plane sapphire by controlled...
1 May 2013 Publication year: 2013Source:Journal of Crystal Growth, Volume 370 An undoped a-plane GaN epi-layer was grown on r-plane sapphire substrate with silica nano-spheres by metal organic chemical...
View ArticleEffects of Si doping in high-quality AlN grown by MOVPE on trench-patterned...
1 May 2013 Publication year: 2013Source:Journal of Crystal Growth, Volume 370 The effects of Si doping on the structural properties of a high-quality AlN layer grown on a trench-patterned AlN/sapphire...
View ArticleNitride based heterostructures with Ga- and N-polarity for sensing applications
1 May 2013 Publication year: 2013Source:Journal of Crystal Growth, Volume 370 In this paper, a first comparative study on the sensing behavior of AlGaN/GaN and AlInN/GaN heterostructures is presented,...
View ArticleStructural and compositional characterization of MOVPE GaN thin films...
1 May 2013 Publication year: 2013Source:Journal of Crystal Growth, Volume 370 GaN thin films were grown on ZnO/c-Al2O3 with excellent uniformity over 2in. diameter wafers using a low...
View ArticleSemibulk InGaN: A novel approach for thick, single phase, epitaxial InGaN...
1 May 2013 Publication year: 2013Source:Journal of Crystal Growth, Volume 370 In this paper we demonstrate a solution to systematically obtain thick, single phase InGaN epilayers by MOVPE. The solution...
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