1 May 2013
Publication year: 2013
Source:Journal of Crystal Growth, Volume 370
/GaN quantum well (QW) structures grown on c -plane surfaces for long wavelength laser structures have been investigated. We found that temperature ramping in the barriers improves the layer structure in avoiding V-pit formation and improves the homogeneity of indium incorporation. In choosing proper temperature profiles degradation of the QWs can be avoided. We demonstrate optical gain for wavelengths larger than 500
► InGaN/GaN quantum wells with high indium content for long wavelength laser structures. ► Homogeneous indium incorporation is critical. ► Optical gain in green reached. ► Indium not easily incorporated beyond 25%.
Publication year: 2013
Source:Journal of Crystal Growth, Volume 370