1 May 2013
Publication year: 2013
Source:Journal of Crystal Growth, Volume 370
GaN thin films were grown on ZnO/c-Al2 O3 with excellent uniformity over 22 as a carrier and dimethylhydrazine as an N source. 5
► GaN was grown by MOVPE on ZnO-buffered sapphire template. ► We have transferred the crystalline GaN film onto Glass substrate. ► The direct water bonding was conducted at room temperature. ► The adhesion forces were found to be very strong and durable. ► Wafer scale GaN on ZnO growth was demonstrated with very high uniformity.
Publication year: 2013
Source:Journal of Crystal Growth, Volume 370