Erratum to “Growth temperature dependence of strain relaxation during InGaAs/GaAs(001) heteroepitaxy” [J. Cryst. Growth 323 (2011) 13–16]

Publication date: 1 February 2014
Source:Journal of Crystal Growth, Volume 387
Author(s): T. Sasaki , H. Suzuki , A. Sai , M. Takahasi , S. Fujikawa , I. Kamiya , Y. Ohshita , M. Yamaguchi